Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.
نویسندگان
چکیده
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
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عنوان ژورنال:
- Advanced materials
دوره 23 47 شماره
صفحات -
تاریخ انتشار 2011